{"product_id":"leakage-current-and-defect-characterization-of-short-channel-mosfets-paperback","title":"Leakage Current and Defect Characterization of Short Channel Mosfets - Paperback","description":"\u003cdiv\u003e\u003cp style=\"text-align: right;\"\u003e\u003ca href=\"https:\/\/reportcopyrightinfringement.com\/\" target=\"_blank\" rel=\"nofollow\"\u003e\u003cb\u003eReport copyright infringement\u003c\/b\u003e\u003c\/a\u003e\u003c\/p\u003e\u003c\/div\u003e\u003cp\u003eby \u003cb\u003eGuntrade Roll\u003c\/b\u003e (Author)\u003c\/p\u003e\u003cp\u003eThe continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source\/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.\u003c\/p\u003e\n            \u003cdiv\u003e\n\u003cstrong\u003eNumber of Pages:\u003c\/strong\u003e 235\u003c\/div\u003e\n            \u003cdiv\u003e\n\u003cstrong\u003eDimensions:\u003c\/strong\u003e 0.48 x 8.04 x 5.68 IN\u003c\/div\u003e\n            \u003cdiv\u003e\n\u003cstrong\u003ePublication Date:\u003c\/strong\u003e February 19, 2014\u003c\/div\u003e\n            ","brand":"BooksCloud","offers":[{"title":"Default Title","offer_id":48760581030137,"sku":"9783832532611","price":135.0,"currency_code":"USD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0789\/2782\/3097\/files\/1Ol6e_Yr879783832532611.webp?v=1786035918","url":"https:\/\/bookscloud.io\/products\/leakage-current-and-defect-characterization-of-short-channel-mosfets-paperback","provider":"BooksCloud Book Dropshipping","version":"1.0","type":"link"}